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HN1K03FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
HN1K03FU
High Speed Switching Applications Analog Switch Applications
Unit in mm
l Hign input impedance l Low gate threshold voltage : Vth = 0.5V~1.5V l Excellent switching times l Small package l Enhancement-mode : ton = 0.16s (typ.) toff = 0.15s (typ.)
Maximum Ratings (Ta = 25C) (Q1, Q2 Common)
Characteristic Drain-Source voltage Gate-Source voltage DC Drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID P D* Tch Tstg Rating 20 10 100 200 150 -55~150 Unit V V mA mW C C
JEDEC EIAJ TOSHIBA Weight: 6.8mg
2-2J1C
*: Total rating
000707EAA1
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
2001-01-23
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HN1K03FU
Electrical Characteristics (Ta = 25C) (Q1, Q2 Common)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time toff Symbol IGSS Test Condition VGS = 10V, VDS = 0 Min. 20 0.5 25 Typ. 50 8 8.5 3.3 9.3 0.16 0.15 Max. 1 1 1.5 12 Unit A V A V mS pF pF pF s s
V (BR) DSS ID = 100A, VGS = 0 IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton VDS = 20V, VGS = 0 VDS = 3V, ID = 0.1mA VDS = 3V, ID = 10mA ID = 10mA, VGS = 2.5V VDS = 3V, VGS = 0, f = 1MHz VDS = 3V, VGS = 0, f = 1MHz VDS = 3V, VGS = 0, f = 1MHz VDD = 3V, ID = 10mA, VGS = 0~2.5V VDD = 3V, ID = 10mA, VGS = 0~2.5V
Equivalent Circuit (Top View)
Marking
2001-01-23
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HN1K03FU
(Q1,Q2 Common)
Switching Time Test Circuit
2001-01-23
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HN1K03FU
(Q1,Q2 Common)
2001-01-23
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